OCZ Technologies' VP of Technology Development, Dr. Michael Schuette, has published an interview with Jeff Lewis, VP of Marketing at Innovative Silicon, Inc (ISi). The pair discuss ISi's brand new Z-RAM technology that promises to use the floating body effect of silicon on insulator circuits to simplify a memory cell and improve memory density by a significant factor.
In other words, instead of reversing the insulation of SoI to get rid of the capacitance, why not turning a problem into a feature, use the capacitance and then get rid of the now redundant storage capacitor?
Z-RAM works by removing the need for a capacitor in the memory cell to store the cell's value, letting the transistor hold the value and regulate access to itself by the rest of the memory circuit. This simplified design lets DRAM densities increase significantly, outstripping eDRAM and embedded SRAM densities by at least two times.
That should let the technology present itself as a candidate for CPU and GPU caches, console technologies where eDRAM is persistently implemented, and other embedded memory situations. More on this technology later, so look out for a short followup.
Read the full interview over on LostCircuits, here.
